Tuning carrier mobilities and polarity of charge transport in films of CuInSe(x)S(2-x) quantum dots
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 10 vom: 11. März, Seite 1701-5 |
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| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2015
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article CuInS2 CuInSe2 field-effect transistors nanocrystals quantum dots |
| Zusammenfassung: | © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. CuInSe(x)S(2-x) quantum dot field-effect transistors show p-type, n-type, and ambipolar behaviors with carrier mobilities up to 0.03 cm(2) V(-1) s(-1). Although some design rules from studies of cadmium and lead containing quantum dots can be applied, remarkable differences are observed including a strong gating effect in as-synthesized nanocyrstals with long ligands |
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| Beschreibung: | Date Completed 11.05.2015 Date Revised 30.09.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201404878 |