Performance potential and limit of MoS2 transistors
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 9 vom: 04. März, Seite 1547-52 |
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| Auteur principal: | |
| Autres auteurs: | , , , , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2015
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
| Sujets: | Journal Article MoS2 low frequency noise negative differential resistance pulsed IV transistor |
| Résumé: | © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. High-performance MoS2 transistors scaled down to 100 nm are studied at various temperatures down to 20 K, where a highest drive current of 800 μA μm(-1) can be achieved. Extremely low electrical noise of 2.8 × 10(-10) μm(2) Hz(-1) at 10 Hz is also achieved at room temperature. Furthermore, a negative differential resistance behavior is experimentally observed and its origin of self-heating is identified using pulsed-current-voltage measurements |
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| Description: | Date Completed 11.05.2015 Date Revised 01.10.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201405068 |