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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201404578
|2 doi
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|a pubmed24n0817.xml
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|a (NLM)25580926
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|e rakwb
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|a eng
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|a Tarasov, Alexey
|e verfasserin
|4 aut
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|a Controlled doping of large-area trilayer MoS2 with molecular reductants and oxidants
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|c 2015
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 14.05.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Highly uniform large-area MoS2 is chemically doped using molecular reductants and oxidants. Electrical measurements, photoemission, and Raman spectroscopy are used to study the doping effect and to understand the underlying mechanism. Strong work-function changes of up to ±1 eV can be achieved, with contributions from state filling and surface dipoles. This results in high doping densities of up to ca. 8 × 10(12) cm(-2)
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|a Journal Article
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|a 2D materials
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|a chemical doping
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|a field-effect transistors
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|a molybdenum disulfide
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|a redox-active species
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|a Zhang, Siyuan
|e verfasserin
|4 aut
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1 |
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|a Tsai, Meng-Yen
|e verfasserin
|4 aut
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|a Campbell, Philip M
|e verfasserin
|4 aut
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|a Graham, Samuel
|e verfasserin
|4 aut
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|a Barlow, Stephen
|e verfasserin
|4 aut
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|a Marder, Seth R
|e verfasserin
|4 aut
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|a Vogel, Eric M
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 7 vom: 18. Feb., Seite 1175-81
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:27
|g year:2015
|g number:7
|g day:18
|g month:02
|g pages:1175-81
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|u http://dx.doi.org/10.1002/adma.201404578
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