Controlled doping of large-area trilayer MoS2 with molecular reductants and oxidants

Controlled doping of large-area trilayer MoS2 with molecular reductants and oxidants

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 7 vom: 18. Feb., Seite 1175-81
1. Verfasser: Tarasov, Alexey (VerfasserIn)
Weitere Verfasser: Zhang, Siyuan, Tsai, Meng-Yen, Campbell, Philip M, Graham, Samuel, Barlow, Stephen, Marder, Seth R, Vogel, Eric M
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials chemical doping field-effect transistors molybdenum disulfide redox-active species
Beschreibung
Zusammenfassung:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Highly uniform large-area MoS2 is chemically doped using molecular reductants and oxidants. Electrical measurements, photoemission, and Raman spectroscopy are used to study the doping effect and to understand the underlying mechanism. Strong work-function changes of up to ±1 eV can be achieved, with contributions from state filling and surface dipoles. This results in high doping densities of up to ca. 8 × 10(12) cm(-2)
Beschreibung:Date Completed 14.05.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201404578