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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201404296
|2 doi
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|a pubmed25n0817.xml
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|a (DE-627)NLM245265791
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|a (NLM)25580710
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Jo, Jeong-Wan
|e verfasserin
|4 aut
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|a Highly stable and imperceptible electronics utilizing photoactivated heterogeneous sol-gel metal-oxide dielectrics and semiconductors
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|c 2015
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 20.11.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a ErratumIn: Adv Mater. 2015 Feb 18;27(7):1142 Kim, Jiwan [added]
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|a Citation Status MEDLINE
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|a © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Rollable metal oxide TFT
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|a deep UV photo-chemical activation
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|a flexible metal oxide gate dielectric
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|a low temperature
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|a solution process
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|a Gels
|2 NLM
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|a Metals
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|a Oxides
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|a Solutions
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|a Zirconium
|2 NLM
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|a C6V6S92N3C
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|a Aluminum Oxide
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|a LMI26O6933
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|a Kim, Jaekyun
|e verfasserin
|4 aut
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|a Kim, Kyung-Tae
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kang, Jin-Gu
|e verfasserin
|4 aut
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| 700 |
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|a Kim, Myung-Gil
|e verfasserin
|4 aut
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| 700 |
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|a Kim, Kwang-Ho
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ko, Hyungduk
|e verfasserin
|4 aut
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| 700 |
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|a Kim, Jiwan
|e verfasserin
|4 aut
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| 700 |
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|a Kim, Yong-Hoon
|e verfasserin
|4 aut
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| 700 |
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|a Park, Sung Kyu
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 7 vom: 18. Feb., Seite 1182-8
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:27
|g year:2015
|g number:7
|g day:18
|g month:02
|g pages:1182-8
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|u http://dx.doi.org/10.1002/adma.201404296
|3 Volltext
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|a GBV_USEFLAG_A
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| 912 |
|
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|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
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|a AR
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| 952 |
|
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|d 27
|j 2015
|e 7
|b 18
|c 02
|h 1182-8
|