Highly stable and imperceptible electronics utilizing photoactivated heterogeneous sol-gel metal-oxide dielectrics and semiconductors
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 7 vom: 18. Feb., Seite 1182-8 |
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| Auteur principal: | |
| Autres auteurs: | , , , , , , , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2015
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
| Sujets: | Journal Article Research Support, Non-U.S. Gov't Rollable metal oxide TFT deep UV photo-chemical activation flexible metal oxide gate dielectric low temperature solution process Gels Metals Oxides plus... |
| Résumé: | © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process |
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| Description: | Date Completed 20.11.2015 Date Revised 30.09.2020 published: Print-Electronic ErratumIn: Adv Mater. 2015 Feb 18;27(7):1142 Kim, Jiwan [added] Citation Status MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201404296 |