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231224s2015 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201403750
|2 doi
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|a pubmed24n0810.xml
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|a (DE-627)NLM24315769X
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|a (NLM)25355690
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Chen, Changxin
|e verfasserin
|4 aut
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|a Graphene nanoribbons under mechanical strain
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|c 2015
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 21.05.2015
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Uniaxial strains are introduced into individual graphene nanoribbons (GNRs) with highly smooth edges to investigate the strain effects on Raman spectroscopic and electrical properties of GNRs. It is found that uniaxial strain downshifts the Raman G-band frequency of GNRs linearly and tunes their bandgap significantly in a non-monotonic manner. The strain engineering of GNRs is promising for potential electronics and photonics applications
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|a Journal Article
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|a Raman spectroscopy
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|a bandgap modulation
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|a graphene nanoribbon field-effect transistors (GNRFETs)
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|a graphene nanoribbons
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|a mechanical strain
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|a Wu, Justin Zachary
|e verfasserin
|4 aut
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|a Lam, Kai Tak
|e verfasserin
|4 aut
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|a Hong, Guosong
|e verfasserin
|4 aut
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|a Gong, Ming
|e verfasserin
|4 aut
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|a Zhang, Bo
|e verfasserin
|4 aut
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|a Lu, Yang
|e verfasserin
|4 aut
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|a Antaris, Alexander L
|e verfasserin
|4 aut
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|a Diao, Shuo
|e verfasserin
|4 aut
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|a Guo, Jing
|e verfasserin
|4 aut
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|a Dai, Hongjie
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 27(2015), 2 vom: 14. Jan., Seite 303-9
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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1 |
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|g volume:27
|g year:2015
|g number:2
|g day:14
|g month:01
|g pages:303-9
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|u http://dx.doi.org/10.1002/adma.201403750
|3 Volltext
|
912 |
|
|
|a GBV_USEFLAG_A
|
912 |
|
|
|a SYSFLAG_A
|
912 |
|
|
|a GBV_NLM
|
912 |
|
|
|a GBV_ILN_350
|
951 |
|
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|a AR
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952 |
|
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|d 27
|j 2015
|e 2
|b 14
|c 01
|h 303-9
|