Graphene nanoribbons under mechanical strain

Graphene nanoribbons under mechanical strain

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 27(2015), 2 vom: 14. Jan., Seite 303-9
1. Verfasser: Chen, Changxin (VerfasserIn)
Weitere Verfasser: Wu, Justin Zachary, Lam, Kai Tak, Hong, Guosong, Gong, Ming, Zhang, Bo, Lu, Yang, Antaris, Alexander L, Diao, Shuo, Guo, Jing, Dai, Hongjie
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2015
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Raman spectroscopy bandgap modulation graphene nanoribbon field-effect transistors (GNRFETs) graphene nanoribbons mechanical strain
Beschreibung
Zusammenfassung:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Uniaxial strains are introduced into individual graphene nanoribbons (GNRs) with highly smooth edges to investigate the strain effects on Raman spectroscopic and electrical properties of GNRs. It is found that uniaxial strain downshifts the Raman G-band frequency of GNRs linearly and tunes their bandgap significantly in a non-monotonic manner. The strain engineering of GNRs is promising for potential electronics and photonics applications
Beschreibung:Date Completed 21.05.2015
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201403750