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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201402363
|2 doi
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|a pubmed24n0807.xml
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|a eng
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|a Kim, Jiye
|e verfasserin
|4 aut
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|a The origin of excellent gate-bias stress stability in organic field-effect transistors employing fluorinated-polymer gate dielectrics
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|c 2014
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 17.07.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Tuning of the energetic barriers to charge transfer at the semiconductor/dielectric interface in organic field-effect transistors (OFETs) is achieved by varying the dielectric functionality. Based on this, the correlation between the magnitude of the energy barrier and the gate-bias stress stability of the OFETs is demonstrated, and the origin of the excellent device stability of OFETs employing fluorinated dielectrics is revealed
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a fluorinated polymers
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|a gate-bias stabilities
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|a organic field-effect transistors
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|a Polymers
|2 NLM
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|a Polystyrenes
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|a Silicon Dioxide
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|a 7631-86-9
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|a Nitrogen
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|a N762921K75
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|a Jang, Jaeyoung
|e verfasserin
|4 aut
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|a Kim, Kyunghun
|e verfasserin
|4 aut
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|a Kim, Haekyoung
|e verfasserin
|4 aut
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|a Kim, Se Hyun
|e verfasserin
|4 aut
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|a Park, Chan Eon
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 26(2014), 42 vom: 12. Nov., Seite 7241-6
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|x 1521-4095
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|g volume:26
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