Transparent, high-performance thin-film transistors with an InGaZnO/aligned-SnO2 -nanowire composite and their application in photodetectors

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 43 vom: 19. Nov., Seite 7399-404
1. Verfasser: Liu, Xingqiang (VerfasserIn)
Weitere Verfasser: Liu, Xi, Wang, Jingli, Liao, Chongnan, Xiao, Xiangheng, Guo, Shishang, Jiang, Changzhong, Fan, Zhiyong, Wang, Ti, Chen, Xiaoshuang, Lu, Wei, Hu, Weida, Liao, Lei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article InGaZnO composite materials nanowires phototransistors thin films thin-film transistors
LEADER 01000naa a22002652 4500
001 NLM242037437
003 DE-627
005 20231224125531.0
007 cr uuu---uuuuu
008 231224s2014 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201401732  |2 doi 
028 5 2 |a pubmed24n0806.xml 
035 |a (DE-627)NLM242037437 
035 |a (NLM)25236580 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Liu, Xingqiang  |e verfasserin  |4 aut 
245 1 0 |a Transparent, high-performance thin-film transistors with an InGaZnO/aligned-SnO2 -nanowire composite and their application in photodetectors 
264 1 |c 2014 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 21.05.2015 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a A high mobility of 109.0 cm(2) V(-1) s(-1) is obtained by thin-film transistors (TFTs) comprising a composite made by aligning SnO2 nanowires (NWs) in amorphous InGaZnO (a-IGZO) thin films. This composite TFT reaches an on-current density of 61.4 μA μm(-1) with a 10 μm channel length. Its performance surpasses that of single-crystalline InGaZnO and is comparable with that of polycrystalline silicon 
650 4 |a Journal Article 
650 4 |a InGaZnO 
650 4 |a composite materials 
650 4 |a nanowires 
650 4 |a phototransistors 
650 4 |a thin films 
650 4 |a thin-film transistors 
700 1 |a Liu, Xi  |e verfasserin  |4 aut 
700 1 |a Wang, Jingli  |e verfasserin  |4 aut 
700 1 |a Liao, Chongnan  |e verfasserin  |4 aut 
700 1 |a Xiao, Xiangheng  |e verfasserin  |4 aut 
700 1 |a Guo, Shishang  |e verfasserin  |4 aut 
700 1 |a Jiang, Changzhong  |e verfasserin  |4 aut 
700 1 |a Fan, Zhiyong  |e verfasserin  |4 aut 
700 1 |a Wang, Ti  |e verfasserin  |4 aut 
700 1 |a Chen, Xiaoshuang  |e verfasserin  |4 aut 
700 1 |a Lu, Wei  |e verfasserin  |4 aut 
700 1 |a Hu, Weida  |e verfasserin  |4 aut 
700 1 |a Liao, Lei  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 26(2014), 43 vom: 19. Nov., Seite 7399-404  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:26  |g year:2014  |g number:43  |g day:19  |g month:11  |g pages:7399-404 
856 4 0 |u http://dx.doi.org/10.1002/adma.201401732  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 26  |j 2014  |e 43  |b 19  |c 11  |h 7399-404