Transparent, high-performance thin-film transistors with an InGaZnO/aligned-SnO2 -nanowire composite and their application in photodetectors

Transparent, high-performance thin-film transistors with an InGaZnO/aligned-SnO2 -nanowire composite and their application in photodetectors

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 43 vom: 19. Nov., Seite 7399-404
1. Verfasser: Liu, Xingqiang (VerfasserIn)
Weitere Verfasser: Liu, Xi, Wang, Jingli, Liao, Chongnan, Xiao, Xiangheng, Guo, Shishang, Jiang, Changzhong, Fan, Zhiyong, Wang, Ti, Chen, Xiaoshuang, Lu, Wei, Hu, Weida, Liao, Lei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article InGaZnO composite materials nanowires phototransistors thin films thin-film transistors
Beschreibung
Zusammenfassung:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A high mobility of 109.0 cm(2) V(-1) s(-1) is obtained by thin-film transistors (TFTs) comprising a composite made by aligning SnO2 nanowires (NWs) in amorphous InGaZnO (a-IGZO) thin films. This composite TFT reaches an on-current density of 61.4 μA μm(-1) with a 10 μm channel length. Its performance surpasses that of single-crystalline InGaZnO and is comparable with that of polycrystalline silicon
Beschreibung:Date Completed 21.05.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201401732