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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201402527
|2 doi
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|a pubmed25n0805.xml
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|a (DE-627)NLM241704839
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|a (NLM)25200550
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|a DE-627
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|e rakwb
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|a eng
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|a Li, Zhipeng
|e verfasserin
|4 aut
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|a An epitaxial ferroelectric tunnel junction on silicon
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|c 2014
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|a Text
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|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 17.07.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a epitaxial growth
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|a ferroelectric tunnel junction
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|a non-volatile memory
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|a pulsed laser deposition
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|a tunneling electroresistance
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|a Barium Compounds
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|a Calcium Compounds
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|a Oxides
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|a barium titanate(IV)
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|a Guo, Xiao
|e verfasserin
|4 aut
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|a Lu, Hui-Bin
|e verfasserin
|4 aut
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|a Zhang, Zaoli
|e verfasserin
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|a Song, Dongsheng
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|a Cheng, Shaobo
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|a Bosman, Michel
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|a Zhu, Jing
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|a Dong, Zhili
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|a Zhu, Weiguang
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 26(2014), 42 vom: 12. Nov., Seite 7185-9
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:26
|g year:2014
|g number:42
|g day:12
|g month:11
|g pages:7185-9
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|u http://dx.doi.org/10.1002/adma.201402527
|3 Volltext
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