An epitaxial ferroelectric tunnel junction on silicon
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Veröffentlicht in: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 42 vom: 12. Nov., Seite 7185-9 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2014
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| Zugriff auf das übergeordnete Werk: | Advanced materials (Deerfield Beach, Fla.) |
| Schlagworte: | Journal Article Research Support, Non-U.S. Gov't epitaxial growth ferroelectric tunnel junction non-volatile memory pulsed laser deposition tunneling electroresistance Barium Compounds Calcium Compounds Oxides mehr... |
| Zusammenfassung: | © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform |
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| Beschreibung: | Date Completed 17.07.2015 Date Revised 30.09.2020 published: Print-Electronic Citation Status MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201402527 |