Room-temperature photoconductivity far below the semiconductor bandgap

Room-temperature photoconductivity far below the semiconductor bandgap

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 38 vom: 02. Okt., Seite 6594-8
Auteur principal: Huang, Zhiming (Auteur)
Autres auteurs: Tong, Jinchao, Huang, Jingguo, Zhou, Wei, Wu, Jing, Gao, Yanqing, Lu, Jinxing, Lin, Tie, Wei, Yanfeng, Chu, Junhao
Format: Article en ligne
Langue:English
Publié: 2014
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't below bandgap photon detection semiconductors
Description
Résumé:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A concept to stimulate photoconductivity in a semiconductor well below its bandgap in a metal-semiconductor-metal structure with sub-wavelength spacing is proposed. A potential well is induced in the semiconductor by external electromagnetic radiation to trap carriers from the metals. This opens an avenue to generate carriers by photons without adequate excitation energy and is expected to have great significance in modern materials
Description:Date Completed 21.05.2015
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201402352