Room-temperature photoconductivity far below the semiconductor bandgap

Room-temperature photoconductivity far below the semiconductor bandgap

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 38 vom: 02. Okt., Seite 6594-8
1. Verfasser: Huang, Zhiming (VerfasserIn)
Weitere Verfasser: Tong, Jinchao, Huang, Jingguo, Zhou, Wei, Wu, Jing, Gao, Yanqing, Lu, Jinxing, Lin, Tie, Wei, Yanfeng, Chu, Junhao
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't below bandgap photon detection semiconductors
Beschreibung
Zusammenfassung:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A concept to stimulate photoconductivity in a semiconductor well below its bandgap in a metal-semiconductor-metal structure with sub-wavelength spacing is proposed. A potential well is induced in the semiconductor by external electromagnetic radiation to trap carriers from the metals. This opens an avenue to generate carriers by photons without adequate excitation energy and is expected to have great significance in modern materials
Beschreibung:Date Completed 21.05.2015
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201402352