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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201400654
|2 doi
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|a pubmed24n0794.xml
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|a eng
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| 100 |
1 |
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|a Lee, Daesu
|e verfasserin
|4 aut
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|a Flexoelectric control of defect formation in ferroelectric epitaxial thin films
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|c 2014
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 31.08.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO3 thin films. An intriguing, so far never demonstrated, effect of internal electric field (Eint ) on defect formation is explored by a means of flexoelectricity. Our study provides novel insight into defect engineering, as well as allows a pathway to design defect configuration and associated electronic function
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a defect engineering
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|a epitaxial thin film
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|a ferroelectric
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|a flexoelectric
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|a strain gradient
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|a Ferric Compounds
|2 NLM
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|a ferrite
|2 NLM
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|a 1317-54-0
|2 NLM
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| 700 |
1 |
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|a Jeon, Byung Chul
|e verfasserin
|4 aut
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|a Yoon, Aram
|e verfasserin
|4 aut
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|a Shin, Yeong Jae
|e verfasserin
|4 aut
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| 700 |
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|a Lee, Myang Hwan
|e verfasserin
|4 aut
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|a Song, Tae Kwon
|e verfasserin
|4 aut
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|a Bu, Sang Don
|e verfasserin
|4 aut
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|a Kim, Miyoung
|e verfasserin
|4 aut
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|a Chung, Jin-Seok
|e verfasserin
|4 aut
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|a Yoon, Jong-Gul
|e verfasserin
|4 aut
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| 700 |
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|a Noh, Tae Won
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 26(2014), 29 vom: 06. Aug., Seite 5005-11
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:26
|g year:2014
|g number:29
|g day:06
|g month:08
|g pages:5005-11
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