Flexoelectric control of defect formation in ferroelectric epitaxial thin films
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 29 vom: 06. Aug., Seite 5005-11 |
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| Auteur principal: | |
| Autres auteurs: | , , , , , , , , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2014
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
| Sujets: | Journal Article Research Support, Non-U.S. Gov't defect engineering epitaxial thin film ferroelectric flexoelectric strain gradient Ferric Compounds ferrite 1317-54-0 |
| Résumé: | © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO3 thin films. An intriguing, so far never demonstrated, effect of internal electric field (Eint ) on defect formation is explored by a means of flexoelectricity. Our study provides novel insight into defect engineering, as well as allows a pathway to design defect configuration and associated electronic function |
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| Description: | Date Completed 31.08.2015 Date Revised 30.09.2020 published: Print-Electronic Citation Status MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.201400654 |