Flexoelectric control of defect formation in ferroelectric epitaxial thin films

Flexoelectric control of defect formation in ferroelectric epitaxial thin films

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 29 vom: 06. Aug., Seite 5005-11
1. Verfasser: Lee, Daesu (VerfasserIn)
Weitere Verfasser: Jeon, Byung Chul, Yoon, Aram, Shin, Yeong Jae, Lee, Myang Hwan, Song, Tae Kwon, Bu, Sang Don, Kim, Miyoung, Chung, Jin-Seok, Yoon, Jong-Gul, Noh, Tae Won
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't defect engineering epitaxial thin film ferroelectric flexoelectric strain gradient Ferric Compounds ferrite 1317-54-0
Beschreibung
Zusammenfassung:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO3 thin films. An intriguing, so far never demonstrated, effect of internal electric field (Eint ) on defect formation is explored by a means of flexoelectricity. Our study provides novel insight into defect engineering, as well as allows a pathway to design defect configuration and associated electronic function
Beschreibung:Date Completed 31.08.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201400654