Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 27 vom: 16. Juli, Seite 4711-6
1. Verfasser: Winget, Paul (VerfasserIn)
Weitere Verfasser: Schirra, Laura K, Cornil, David, Li, Hong, Coropceanu, Veaceslav, Ndione, Paul F, Sigdel, Ajaya K, Ginley, David S, Berry, Joseph J, Shim, Jaewon, Kim, Hyungchui, Kippelen, Bernard, Brédas, Jean-Luc, Monti, Oliver L A
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. PTCDI ZnO interfacial electronic structure organic semiconductor surface defects Imides perylenetetracarboxylic diimide mehr... Perylene 5QD5427UN7 Zinc Oxide SOI2LOH54Z
LEADER 01000naa a22002652 4500
001 NLM238273164
003 DE-627
005 20231224113430.0
007 cr uuu---uuuuu
008 231224s2014 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201305351  |2 doi 
028 5 2 |a pubmed24n0794.xml 
035 |a (DE-627)NLM238273164 
035 |a (NLM)24830796 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Winget, Paul  |e verfasserin  |4 aut 
245 1 0 |a Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction 
264 1 |c 2014 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 20.08.2015 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status MEDLINE 
520 |a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
650 4 |a PTCDI 
650 4 |a ZnO 
650 4 |a interfacial electronic structure 
650 4 |a organic semiconductor 
650 4 |a surface defects 
650 7 |a Imides  |2 NLM 
650 7 |a perylenetetracarboxylic diimide  |2 NLM 
650 7 |a Perylene  |2 NLM 
650 7 |a 5QD5427UN7  |2 NLM 
650 7 |a Zinc Oxide  |2 NLM 
650 7 |a SOI2LOH54Z  |2 NLM 
700 1 |a Schirra, Laura K  |e verfasserin  |4 aut 
700 1 |a Cornil, David  |e verfasserin  |4 aut 
700 1 |a Li, Hong  |e verfasserin  |4 aut 
700 1 |a Coropceanu, Veaceslav  |e verfasserin  |4 aut 
700 1 |a Ndione, Paul F  |e verfasserin  |4 aut 
700 1 |a Sigdel, Ajaya K  |e verfasserin  |4 aut 
700 1 |a Ginley, David S  |e verfasserin  |4 aut 
700 1 |a Berry, Joseph J  |e verfasserin  |4 aut 
700 1 |a Shim, Jaewon  |e verfasserin  |4 aut 
700 1 |a Kim, Hyungchui  |e verfasserin  |4 aut 
700 1 |a Kippelen, Bernard  |e verfasserin  |4 aut 
700 1 |a Brédas, Jean-Luc  |e verfasserin  |4 aut 
700 1 |a Monti, Oliver L A  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 26(2014), 27 vom: 16. Juli, Seite 4711-6  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:26  |g year:2014  |g number:27  |g day:16  |g month:07  |g pages:4711-6 
856 4 0 |u http://dx.doi.org/10.1002/adma.201305351  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 26  |j 2014  |e 27  |b 16  |c 07  |h 4711-6