Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 27 vom: 16. Juli, Seite 4711-6
1. Verfasser: Winget, Paul (VerfasserIn)
Weitere Verfasser: Schirra, Laura K, Cornil, David, Li, Hong, Coropceanu, Veaceslav, Ndione, Paul F, Sigdel, Ajaya K, Ginley, David S, Berry, Joseph J, Shim, Jaewon, Kim, Hyungchui, Kippelen, Bernard, Brédas, Jean-Luc, Monti, Oliver L A
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. PTCDI ZnO interfacial electronic structure organic semiconductor surface defects Imides perylenetetracarboxylic diimide mehr... Perylene 5QD5427UN7 Zinc Oxide SOI2LOH54Z
Beschreibung
Zusammenfassung:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties
Beschreibung:Date Completed 20.08.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201305351