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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201305845
|2 doi
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|a pubmed24n0790.xml
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|a (DE-627)NLM236980327
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|a (NLM)24692079
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Lin, Yen-Fu
|e verfasserin
|4 aut
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|a Ambipolar MoTe2 transistors and their applications in logic circuits
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|c 2014
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 11.05.2015
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (Vbg) and drain-source voltage (Vds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Schottky barriers
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|a ambipolar transistors
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|a electronics
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|a transistors
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|a Xu, Yong
|e verfasserin
|4 aut
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|a Wang, Sheng-Tsung
|e verfasserin
|4 aut
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|a Li, Song-Lin
|e verfasserin
|4 aut
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|a Yamamoto, Mahito
|e verfasserin
|4 aut
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|a Aparecido-Ferreira, Alex
|e verfasserin
|4 aut
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|a Li, Wenwu
|e verfasserin
|4 aut
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|a Sun, Huabin
|e verfasserin
|4 aut
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|a Nakaharai, Shu
|e verfasserin
|4 aut
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|a Jian, Wen-Bin
|e verfasserin
|4 aut
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|a Ueno, Keiji
|e verfasserin
|4 aut
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|a Tsukagoshi, Kazuhito
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 26(2014), 20 vom: 28. Mai, Seite 3263-9
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:26
|g year:2014
|g number:20
|g day:28
|g month:05
|g pages:3263-9
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|u http://dx.doi.org/10.1002/adma.201305845
|3 Volltext
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