Ambipolar MoTe2 transistors and their applications in logic circuits

Ambipolar MoTe2 transistors and their applications in logic circuits

© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 20 vom: 28. Mai, Seite 3263-9
1. Verfasser: Lin, Yen-Fu (VerfasserIn)
Weitere Verfasser: Xu, Yong, Wang, Sheng-Tsung, Li, Song-Lin, Yamamoto, Mahito, Aparecido-Ferreira, Alex, Li, Wenwu, Sun, Huabin, Nakaharai, Shu, Jian, Wen-Bin, Ueno, Keiji, Tsukagoshi, Kazuhito
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Schottky barriers ambipolar transistors electronics transistors
Beschreibung
Zusammenfassung:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (Vbg) and drain-source voltage (Vds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications
Beschreibung:Date Completed 11.05.2015
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201305845