Scanning X-ray strain microscopy of inhomogeneously strained Ge micro-bridges
Strained semiconductors are ubiquitous in microelectronics and microelectromechanical systems, where high local stress levels can either be detrimental for their integrity or enhance their performance. Consequently, local probes for elastic strain are essential in analyzing such devices. Here, a sca...
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Bibliographische Detailangaben
| Veröffentlicht in: | Journal of synchrotron radiation. - 1994. - 21(2014), Pt 1 vom: 13. Jan., Seite 111-8
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| 1. Verfasser: |
Etzelstorfer, Tanja
(VerfasserIn) |
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| Weitere Verfasser: |
Süess, Martin J,
Schiefler, Gustav L,
Jacques, Vincent L R,
Carbone, Dina,
Chrastina, Daniel,
Isella, Giovanni,
Spolenak, Ralph,
Stangl, Julian,
Sigg, Hans,
Diaz, Ana |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2014
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| Zugriff auf das übergeordnete Werk: | Journal of synchrotron radiation
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| Schlagworte: | Journal Article
X-ray diffraction
local probe X-ray diffraction
strain |
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