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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201304937
|2 doi
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|a pubmed24n0779.xml
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|a eng
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| 100 |
1 |
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|a Wang, Lifeng
|e verfasserin
|4 aut
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| 245 |
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|a Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of graphene-based field-effect transistors
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|c 2014
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 04.11.2014
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Viable and general techniques that allow effective size control of triangular-shaped, single-crystal, monolayer h-BN domains grown by the CVD method, direct optical visualization of h-BN domains, and the cleaning of the h-BN surface to achieve reliable graphene device quality are reported for the first time. This study points to a critical role of the interfacial properties between the graphene and the monolayer h-BN in determining reliable, enhanced graphene-device performance
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a chemical vapor deposition
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|a electronic devices
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|a graphene
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| 650 |
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|a hexagonal boron nitride
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| 650 |
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4 |
|a interfaces
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| 700 |
1 |
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|a Wu, Bin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Jisi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Hongtao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Pingan
|e verfasserin
|4 aut
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|a Liu, Yunqi
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 26(2014), 10 vom: 12. März, Seite 1559-64
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|g volume:26
|g year:2014
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|g day:12
|g month:03
|g pages:1559-64
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|u http://dx.doi.org/10.1002/adma.201304937
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