Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of graphene-based field-effect transistors

Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of graphene-based field-effect transistors

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 10 vom: 12. März, Seite 1559-64
1. Verfasser: Wang, Lifeng (VerfasserIn)
Weitere Verfasser: Wu, Bin, Chen, Jisi, Liu, Hongtao, Hu, Pingan, Liu, Yunqi
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't chemical vapor deposition electronic devices graphene hexagonal boron nitride interfaces
Beschreibung
Zusammenfassung:© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Viable and general techniques that allow effective size control of triangular-shaped, single-crystal, monolayer h-BN domains grown by the CVD method, direct optical visualization of h-BN domains, and the cleaning of the h-BN surface to achieve reliable graphene device quality are reported for the first time. This study points to a critical role of the interfacial properties between the graphene and the monolayer h-BN in determining reliable, enhanced graphene-device performance
Beschreibung:Date Completed 04.11.2014
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201304937