2-dimensional transition metal dichalcogenides with tunable direct band gaps MoS₂(₁-x) Se₂x monolayers

2-dimensional transition metal dichalcogenides with tunable direct band gaps : MoS₂(₁-x) Se₂x monolayers

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 9 vom: 05. März, Seite 1399-404
Auteur principal: Mann, John (Auteur)
Autres auteurs: Ma, Quan, Odenthal, Patrick M, Isarraraz, Miguel, Le, Duy, Preciado, Edwin, Barroso, David, Yamaguchi, Koichi, von Son Palacio, Gretel, Nguyen, Andrew, Tran, Tai, Wurch, Michelle, Nguyen, Ariana, Klee, Velveth, Bobek, Sarah, Sun, Dezheng, Heinz, Tony F, Rahman, Talat S, Kawakami, Roland, Bartels, Ludwig
Format: Article en ligne
Langue:English
Publié: 2014
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. CVD alloys atomically thin films bandgap engineering molybdenum diselenide molybdenum disulfide transition metal dichalcogenides
Description
Résumé:© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
MoS2(1-x) Se2x single-layer films are prepared using a mixture of organic selenium and sulfur precursors as well as a solid molybdenum source. The direct bandgaps are found to scale nearly linearly with composition in the range of 1.87 eV (pure single-layer MoS2 ) to 1.55 eV (pure single-layer MoSe2 ) permitting straightforward bandgap engineering
Description:Date Completed 24.11.2014
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201304389