Bandgap tunability in Zn(Sn,Ge)N(2) semiconductor alloys

Bandgap tunability in Zn(Sn,Ge)N(2) semiconductor alloys

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 8 vom: 26. Feb., Seite 1235-41
1. Verfasser: Narang, Prineha (VerfasserIn)
Weitere Verfasser: Chen, Shiyou, Coronel, Naomi C, Gul, Sheraz, Yano, Junko, Wang, Lin-Wang, Lewis, Nathan S, Atwater, Harry A
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. Zn(Sn,Ge)N2 semiconductor alloys bandgap miscibility
LEADER 01000naa a22002652 4500
001 NLM233366768
003 DE-627
005 20231224094950.0
007 cr uuu---uuuuu
008 231224s2014 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201304473  |2 doi 
028 5 2 |a pubmed24n0778.xml 
035 |a (DE-627)NLM233366768 
035 |a (NLM)24307317 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Narang, Prineha  |e verfasserin  |4 aut 
245 1 0 |a Bandgap tunability in Zn(Sn,Ge)N(2) semiconductor alloys 
264 1 |c 2014 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 03.12.2014 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a ZnSn1-x Gex N2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2 ) to 3.1 eV (ZnGeN2 ) by control of the Sn/Ge ratio 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
650 4 |a Zn(Sn,Ge)N2 semiconductor alloys 
650 4 |a bandgap 
650 4 |a miscibility 
700 1 |a Chen, Shiyou  |e verfasserin  |4 aut 
700 1 |a Coronel, Naomi C  |e verfasserin  |4 aut 
700 1 |a Gul, Sheraz  |e verfasserin  |4 aut 
700 1 |a Yano, Junko  |e verfasserin  |4 aut 
700 1 |a Wang, Lin-Wang  |e verfasserin  |4 aut 
700 1 |a Lewis, Nathan S  |e verfasserin  |4 aut 
700 1 |a Atwater, Harry A  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 26(2014), 8 vom: 26. Feb., Seite 1235-41  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:26  |g year:2014  |g number:8  |g day:26  |g month:02  |g pages:1235-41 
856 4 0 |u http://dx.doi.org/10.1002/adma.201304473  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 26  |j 2014  |e 8  |b 26  |c 02  |h 1235-41