Bandgap tunability in Zn(Sn,Ge)N(2) semiconductor alloys

Bandgap tunability in Zn(Sn,Ge)N(2) semiconductor alloys

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 8 vom: 26. Feb., Seite 1235-41
1. Verfasser: Narang, Prineha (VerfasserIn)
Weitere Verfasser: Chen, Shiyou, Coronel, Naomi C, Gul, Sheraz, Yano, Junko, Wang, Lin-Wang, Lewis, Nathan S, Atwater, Harry A
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. Zn(Sn,Ge)N2 semiconductor alloys bandgap miscibility
Beschreibung
Zusammenfassung:© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
ZnSn1-x Gex N2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2 ) to 3.1 eV (ZnGeN2 ) by control of the Sn/Ge ratio
Beschreibung:Date Completed 03.12.2014
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201304473