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231224s2014 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201303060
|2 doi
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|a pubmed24n0773.xml
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|a (DE-627)NLM232108358
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|a (NLM)24170627
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|a DE-627
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|c DE-627
|e rakwb
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|a eng
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|a Kronemeijer, Auke J
|e verfasserin
|4 aut
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|a Two-dimensional carrier distribution in top-gate polymer field-effect transistors
|b correlation between width of density of localized states and Urbach energy
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|c 2014
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 29.09.2014
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|a Date Revised 21.10.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A general semiconductor-independent two-dimensional character of the carrier distribution in top-gate polymer field-effect transistors is revealed by analysing temperature-dependent transfer characteristics and the sub-bandgap absorption tails of the polymer semiconductors. A correlation between the extracted width of the density of states and the Urbach energy is presented, corroborating the 2D accumulation layer and demonstrating an intricate connection between optical measurements concerning disorder and charge transport in transistors
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a carrier distribution
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|a density of states
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|a disorder
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|a field-effect transistors
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|a organic electronics
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|a urbach energy
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|a Pecunia, Vincenzo
|e verfasserin
|4 aut
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|a Venkateshvaran, Deepak
|e verfasserin
|4 aut
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|a Nikolka, Mark
|e verfasserin
|4 aut
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|a Sadhanala, Aditya
|e verfasserin
|4 aut
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|a Moriarty, John
|e verfasserin
|4 aut
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1 |
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|a Szumilo, Monika
|e verfasserin
|4 aut
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|a Sirringhaus, Henning
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 26(2014), 5 vom: 15. Feb., Seite 728-33
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:26
|g year:2014
|g number:5
|g day:15
|g month:02
|g pages:728-33
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|u http://dx.doi.org/10.1002/adma.201303060
|3 Volltext
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