Two-dimensional carrier distribution in top-gate polymer field-effect transistors : correlation between width of density of localized states and Urbach energy

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 5 vom: 15. Feb., Seite 728-33
1. Verfasser: Kronemeijer, Auke J (VerfasserIn)
Weitere Verfasser: Pecunia, Vincenzo, Venkateshvaran, Deepak, Nikolka, Mark, Sadhanala, Aditya, Moriarty, John, Szumilo, Monika, Sirringhaus, Henning
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't carrier distribution density of states disorder field-effect transistors organic electronics urbach energy
Beschreibung
Zusammenfassung:© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A general semiconductor-independent two-dimensional character of the carrier distribution in top-gate polymer field-effect transistors is revealed by analysing temperature-dependent transfer characteristics and the sub-bandgap absorption tails of the polymer semiconductors. A correlation between the extracted width of the density of states and the Urbach energy is presented, corroborating the 2D accumulation layer and demonstrating an intricate connection between optical measurements concerning disorder and charge transport in transistors
Beschreibung:Date Completed 29.09.2014
Date Revised 21.10.2021
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201303060