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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201303335
|2 doi
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|a pubmed24n0772.xml
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|a eng
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|a Min, Misook
|e verfasserin
|4 aut
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|a Voltage-controlled nonvolatile molecular memory of an azobenzene monolayer through solution-processed reduced graphene oxide contacts
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|c 2013
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 04.08.2014
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The solution-processed fabrication of an azobenzene (ABC10) monolayer-based nonvolatile memory device on a reduced graphene oxide (rGO) electrode is successfully accomplished. Trans--cis isomerizations of ABC10 between two rGO electrodes in a crossbar device are controlled by applied voltage. An rGO soft-contact top electrode plays an important role in the conformational-change-dependent conductance switching process of an ABC10 monolayer
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a azobenzenes
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|a molecular electronics
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|a reduced graphene oxide
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|a self-assembled monolayers
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|a voltage-controlled molecular memory
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|a Azo Compounds
|2 NLM
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|a Oxides
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|a Graphite
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|a 7782-42-5
|2 NLM
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|a azobenzene
|2 NLM
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|a F0U1H6UG5C
|2 NLM
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| 700 |
1 |
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|a Seo, Sohyeon
|e verfasserin
|4 aut
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1 |
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|a Lee, Sae Mi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Hyoyoung
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 48 vom: 23. Dez., Seite 7045-50
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:25
|g year:2013
|g number:48
|g day:23
|g month:12
|g pages:7045-50
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|u http://dx.doi.org/10.1002/adma.201303335
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