Voltage-controlled nonvolatile molecular memory of an azobenzene monolayer through solution-processed reduced graphene oxide contacts

Voltage-controlled nonvolatile molecular memory of an azobenzene monolayer through solution-processed reduced graphene oxide contacts

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 48 vom: 23. Dez., Seite 7045-50
1. Verfasser: Min, Misook (VerfasserIn)
Weitere Verfasser: Seo, Sohyeon, Lee, Sae Mi, Lee, Hyoyoung
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't azobenzenes molecular electronics reduced graphene oxide self-assembled monolayers voltage-controlled molecular memory Azo Compounds Oxides Graphite mehr... 7782-42-5 azobenzene F0U1H6UG5C
Beschreibung
Zusammenfassung:© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The solution-processed fabrication of an azobenzene (ABC10) monolayer-based nonvolatile memory device on a reduced graphene oxide (rGO) electrode is successfully accomplished. Trans--cis isomerizations of ABC10 between two rGO electrodes in a crossbar device are controlled by applied voltage. An rGO soft-contact top electrode plays an important role in the conformational-change-dependent conductance switching process of an ABC10 monolayer
Beschreibung:Date Completed 04.08.2014
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201303335