Metal-containing block copolymer thin films yield wire grid polarizers with high aspect ratio

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 26(2014), 5 vom: 18. Feb., Seite 791-5
1. Verfasser: Kim, So Youn (VerfasserIn)
Weitere Verfasser: Gwyther, Jessica, Manners, Ian, Chaikin, Paul M, Register, Richard A
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2014
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, U.S. Gov't, Non-P.H.S. block copolymer lithography nanopatterning wire grid polarizer
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520 |a Highly selective etch masks are formed by thin films of a polystyrene-b-poly(ferrocenylisopropylmethylsilane) diblock copolymer, PS-PFiPMS, containing hemicylindrical domains of PFiPMS. These domains, with a period of 35 nm, are readily aligned through mechanical shear. Aligned PS-PFiPMS templates are employed to fabricate high-aspect-ratio nanowire grids from amorphous silicon, which can polarize deep ultraviolet radiation, including 193 nm, at >90% efficiency 
650 4 |a Journal Article 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
650 4 |a block copolymer lithography 
650 4 |a nanopatterning 
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700 1 |a Gwyther, Jessica  |e verfasserin  |4 aut 
700 1 |a Manners, Ian  |e verfasserin  |4 aut 
700 1 |a Chaikin, Paul M  |e verfasserin  |4 aut 
700 1 |a Register, Richard A  |e verfasserin  |4 aut 
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