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231224s2013 xx ||||| 00| ||eng c |
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|a pubmed24n0770.xml
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|a (DE-627)NLM230969704
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|a (NLM)24046489
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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1 |
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|a Kyutt, Reginald
|e verfasserin
|4 aut
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|a Three-wave X-ray diffraction in distorted epitaxial structures
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|c 2013
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|a Text
|b txt
|2 rdacontent
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|a ohne Hilfsmittel zu benutzen
|b n
|2 rdamedia
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|a Band
|b nc
|2 rdacarrier
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|a Date Revised 21.10.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Three-wave diffraction has been measured for a set of GaN, AlN, AlGaN and ZnO epitaxial layers grown on c-sapphire. A Renninger scan for the primary forbidden 0001 reflection was used. For each of the three-wave combinations, θ-scan curves were measured. The intensity and angular width of both ϕ- and θ-scan three-wave peaks were analyzed. The experimental data were used to determine properties of the multiple diffraction pattern in highly distorted layers. It is shown that the FWHM of θ scans is highly sensitive to the structural perfection and strongly depends on the type of three-wave combination. The narrowest peaks are observed for multiple combinations with the largest l index of the secondary hkl reflection. An influence of the type of the dislocation structure on the θ-scan broadening was revealed. These experimental facts are interpreted by considering the scanning geometry in the reciprocal space and taking into account the disc-shaped reciprocal-lattice points. The total integrated intensities of all the three-wave combinations were determined and their ratios were found to be in only a qualitative agreement with the theory. For AlGaN layers, the presence of the nonzero 0001 reflection was revealed, in contrast to AlN and GaN films
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|a Journal Article
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|a X-ray diffraction
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|a epitaxial layers
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|a multiple diffraction
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|a structural defects
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|a wurtzite structure
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|a Scheglov, Mikhail
|e verfasserin
|4 aut
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| 773 |
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8 |
|i Enthalten in
|t Journal of applied crystallography
|d 1998
|g 46(2013), Pt 4 vom: 01. Aug., Seite 861-867
|w (DE-627)NLM098121561
|x 0021-8898
|7 nnns
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| 773 |
1 |
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|g volume:46
|g year:2013
|g number:Pt 4
|g day:01
|g month:08
|g pages:861-867
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|a GBV_ILN_350
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|a AR
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|d 46
|j 2013
|e Pt 4
|b 01
|c 08
|h 861-867
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