Three-wave X-ray diffraction in distorted epitaxial structures
Three-wave diffraction has been measured for a set of GaN, AlN, AlGaN and ZnO epitaxial layers grown on c-sapphire. A Renninger scan for the primary forbidden 0001 reflection was used. For each of the three-wave combinations, θ-scan curves were measured. The intensity and angular width of both ϕ- an...
| Veröffentlicht in: | Journal of applied crystallography. - 1998. - 46(2013), Pt 4 vom: 01. Aug., Seite 861-867 |
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| Format: | Aufsatz |
| Sprache: | English |
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2013
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| Zugriff auf das übergeordnete Werk: | Journal of applied crystallography |
| Schlagworte: | Journal Article X-ray diffraction epitaxial layers multiple diffraction structural defects wurtzite structure |