High-performance nanowire oxide photo-thin film transistor

High-performance nanowire oxide photo-thin film transistor

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 39 vom: 18. Okt., Seite 5549-54
1. Verfasser: Ahn, Seung-Eon (VerfasserIn)
Weitere Verfasser: Jeon, Sanghun, Jeon, Youg Woo, Kim, Changjung, Lee, Myoung-Jae, Lee, Chang-Won, Park, Jongbong, Song, Ihun, Nathan, Arokia, Lee, Sungsik, Chung, U-In
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't amorphous oxide semiconductors displays photosensors phototransistors thin-film transistors transistors
Beschreibung
Zusammenfassung:© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 10(6) test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays
Beschreibung:Date Completed 14.05.2014
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma201301102