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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201303230
|2 doi
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|a pubmed24n0769.xml
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|a eng
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|a Lee, Kangho
|e verfasserin
|4 aut
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|a High-performance sensors based on molybdenum disulfide thin films
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|c 2013
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 14.07.2014
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a High-performance sensors based on molybdenum disulfide (MoS2 ) grown by sulfurization of sputtered molybdenum layers are presented. Using a simple integration scheme, it is found that the electrical conductivity of MoS2 films is highly sensitive to NH3 adsorption, consistent with n-type semiconducting behavior. A sensitivity of 300 ppb at room temperature is achieved, showing the high potential of 2D transition metal-dichalcogenides for sensing
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a charge transport
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|a microstructures
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|a molecular electronics
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|a sensors
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|a thin films
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|a Gatensby, Riley
|e verfasserin
|4 aut
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|a McEvoy, Niall
|e verfasserin
|4 aut
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|a Hallam, Toby
|e verfasserin
|4 aut
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|a Duesberg, Georg S
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 46 vom: 10. Dez., Seite 6699-702
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|x 1521-4095
|7 nnns
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|g volume:25
|g year:2013
|g number:46
|g day:10
|g month:12
|g pages:6699-702
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|u http://dx.doi.org/10.1002/adma.201303230
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