High-performance sensors based on molybdenum disulfide thin films

High-performance sensors based on molybdenum disulfide thin films

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 46 vom: 10. Dez., Seite 6699-702
1. Verfasser: Lee, Kangho (VerfasserIn)
Weitere Verfasser: Gatensby, Riley, McEvoy, Niall, Hallam, Toby, Duesberg, Georg S
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't charge transport microstructures molecular electronics sensors thin films
Beschreibung
Zusammenfassung:© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
High-performance sensors based on molybdenum disulfide (MoS2 ) grown by sulfurization of sputtered molybdenum layers are presented. Using a simple integration scheme, it is found that the electrical conductivity of MoS2 films is highly sensitive to NH3 adsorption, consistent with n-type semiconducting behavior. A sensitivity of 300 ppb at room temperature is achieved, showing the high potential of 2D transition metal-dichalcogenides for sensing
Beschreibung:Date Completed 14.07.2014
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201303230