Tunable electroluminescence in planar graphene/SiO(2) memristors

Tunable electroluminescence in planar graphene/SiO(2) memristors

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 39 vom: 18. Okt., Seite 5593-8
1. Verfasser: He, Congli (VerfasserIn)
Weitere Verfasser: Li, Jiafang, Wu, Xing, Chen, Peng, Zhao, Jing, Yin, Kuibo, Cheng, Meng, Yang, Wei, Xie, Guibai, Wang, Duoming, Liu, Donghua, Yang, Rong, Shi, Dongxia, Li, Zhiyuan, Sun, Litao, Zhang, Guangyu
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Si nanocrystals electroluminescence graphene/SiO2 nanogap devices memristor
Beschreibung
Zusammenfassung:© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics
Beschreibung:Date Completed 14.05.2014
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201302447