Kinase detection with gallium nitride based high electron mobility transistors
A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The A...
| Publié dans: | Applied physics letters. - 1998. - 103(2013), 1 vom: 01. Juli, Seite 13701 |
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| Auteur principal: | |
| Autres auteurs: | , , , , , |
| Format: | Article |
| Langue: | English |
| Publié: |
2013
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| Accès à la collection: | Applied physics letters |
| Sujets: | Journal Article |
| Résumé: | A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing |
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| Description: | Date Revised 21.10.2021 published: Print ErratumIn: Appl Phys Lett. 2013 Aug 19;103(8):89902. doi: 10.1063/1.4819200. - PMID 24046484 Citation Status PubMed-not-MEDLINE |
| ISSN: | 0003-6951 |