Kinase detection with gallium nitride based high electron mobility transistors
A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The A...
| Publié dans: | Applied physics letters. - 1998. - 103(2013), 1 vom: 01. Juli, Seite 13701 |
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| Auteur principal: | |
| Autres auteurs: | , , , , , |
| Format: | Article |
| Langue: | English |
| Publié: |
2013
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| Accès à la collection: | Applied physics letters |
| Sujets: | Journal Article |