High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 34 vom: 14. Sept., Seite 4789-93
Auteur principal: Wang, Gunuk (Auteur)
Autres auteurs: Lauchner, Adam C, Lin, Jian, Natelson, Douglas, Palem, Krishna V, Tour, James M
Format: Article en ligne
Langue:English
Publié: 2013
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. non-volatile memory one diode-one resistor silicon oxides
LEADER 01000caa a22002652 4500
001 NLM228995426
003 DE-627
005 20250215152125.0
007 cr uuu---uuuuu
008 231224s2013 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.201302047  |2 doi 
028 5 2 |a pubmed25n0763.xml 
035 |a (DE-627)NLM228995426 
035 |a (NLM)23836363 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Wang, Gunuk  |e verfasserin  |4 aut 
245 1 0 |a High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array 
264 1 |c 2013 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Completed 24.03.2014 
500 |a Date Revised 30.09.2020 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 
520 |a An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications 
650 4 |a Journal Article 
650 4 |a Research Support, Non-U.S. Gov't 
650 4 |a Research Support, U.S. Gov't, Non-P.H.S. 
650 4 |a non-volatile memory 
650 4 |a one diode-one resistor 
650 4 |a silicon oxides 
700 1 |a Lauchner, Adam C  |e verfasserin  |4 aut 
700 1 |a Lin, Jian  |e verfasserin  |4 aut 
700 1 |a Natelson, Douglas  |e verfasserin  |4 aut 
700 1 |a Palem, Krishna V  |e verfasserin  |4 aut 
700 1 |a Tour, James M  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 25(2013), 34 vom: 14. Sept., Seite 4789-93  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:25  |g year:2013  |g number:34  |g day:14  |g month:09  |g pages:4789-93 
856 4 0 |u http://dx.doi.org/10.1002/adma.201302047  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 25  |j 2013  |e 34  |b 14  |c 09  |h 4789-93