High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array

High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 34 vom: 14. Sept., Seite 4789-93
Auteur principal: Wang, Gunuk (Auteur)
Autres auteurs: Lauchner, Adam C, Lin, Jian, Natelson, Douglas, Palem, Krishna V, Tour, James M
Format: Article en ligne
Langue:English
Publié: 2013
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. non-volatile memory one diode-one resistor silicon oxides
Description
Résumé:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications
Description:Date Completed 24.03.2014
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201302047