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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201300886
|2 doi
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|a pubmed24n0759.xml
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|a (NLM)23696267
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|e rakwb
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|a eng
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|a Xie, Wei
|e verfasserin
|4 aut
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|a Temperature-independent transport in high-mobility dinaphtho-thieno-thiophene (DNTT) single crystal transistors
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|c 2013
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|a Text
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 06.01.2014
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm(2) V(-1) s(-1) . Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a DNTT single crystals
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|a temperature independent transport
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|a trap density of states
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|a weak mobility anisotropy
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|a Willa, Kristin
|e verfasserin
|4 aut
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|a Wu, Yanfei
|e verfasserin
|4 aut
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|a Häusermann, Roger
|e verfasserin
|4 aut
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|a Takimiya, Kazuo
|e verfasserin
|4 aut
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|a Batlogg, Bertram
|e verfasserin
|4 aut
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|a Frisbie, C Daniel
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 25 vom: 05. Juli, Seite 3478-84
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:25
|g year:2013
|g number:25
|g day:05
|g month:07
|g pages:3478-84
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|u http://dx.doi.org/10.1002/adma.201300886
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