Temperature-independent transport in high-mobility dinaphtho-thieno-thiophene (DNTT) single crystal transistors

Temperature-independent transport in high-mobility dinaphtho-thieno-thiophene (DNTT) single crystal transistors

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 25 vom: 05. Juli, Seite 3478-84
1. Verfasser: Xie, Wei (VerfasserIn)
Weitere Verfasser: Willa, Kristin, Wu, Yanfei, Häusermann, Roger, Takimiya, Kazuo, Batlogg, Bertram, Frisbie, C Daniel
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. DNTT single crystals temperature independent transport trap density of states weak mobility anisotropy
Beschreibung
Zusammenfassung:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm(2) V(-1) s(-1) . Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals
Beschreibung:Date Completed 06.01.2014
Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201300886