Correlation between propagation loss and silicon dioxide film properties for surface acoustic wave devices

The correlation between the propagation loss and SiO2 film properties has been studied for temperature-compensated SAW devices using the SiO2/LiNbO3 structure. The SAW devices were prepared under different deposition temperatures for SiO2 film. Although they possessed excellent temperature coefficie...

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control. - 1986. - 60(2013), 5 vom: 21. Mai, Seite 993-7
1. Verfasser: Matsuda, Satoru (VerfasserIn)
Weitere Verfasser: Miura, Michio, Matsuda, Takashi, Ueda, Masanori, Satoh, Yoshio, Hashimoto, Ken-Ya
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:IEEE transactions on ultrasonics, ferroelectrics, and frequency control
Schlagworte:Journal Article