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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201301030
|2 doi
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|a pubmed24n0757.xml
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|a (DE-627)NLM227282078
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|a (NLM)23649872
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Chambers, Scott A
|e verfasserin
|4 aut
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|a Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping
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|c 2013
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 17.10.2013
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Research Support, U.S. Gov't, Non-P.H.S.
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|a first-principles modeling
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|a metal/oxide interfaces
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|a ohmic contacts
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|a scanning transmission electron microscopy
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|a x-ray and ultraviolet photoemission
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|a Metals
|2 NLM
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|a Oxides
|2 NLM
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|a Gu, Meng
|e verfasserin
|4 aut
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1 |
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|a Sushko, Peter V
|e verfasserin
|4 aut
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|a Yang, Hao
|e verfasserin
|4 aut
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|a Wang, Chongmin
|e verfasserin
|4 aut
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|a Browning, Nigel D
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 29 vom: 07. Aug., Seite 4001-5
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:25
|g year:2013
|g number:29
|g day:07
|g month:08
|g pages:4001-5
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|u http://dx.doi.org/10.1002/adma.201301030
|3 Volltext
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