Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping

Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping

Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 25(2013), 29 vom: 07. Aug., Seite 4001-5
1. Verfasser: Chambers, Scott A (VerfasserIn)
Weitere Verfasser: Gu, Meng, Sushko, Peter V, Yang, Hao, Wang, Chongmin, Browning, Nigel D
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2013
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Research Support, Non-U.S. Gov't Research Support, U.S. Gov't, Non-P.H.S. first-principles modeling metal/oxide interfaces ohmic contacts scanning transmission electron microscopy x-ray and ultraviolet photoemission Metals Oxides
Beschreibung
Zusammenfassung:Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low
Beschreibung:Date Completed 17.10.2013
Date Revised 30.09.2020
published: Print-Electronic
Citation Status MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201301030