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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201300549
|2 doi
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|a pubmed24n0755.xml
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|a eng
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| 100 |
1 |
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|a Fakhri, Morteza
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Facile encapsulation of oxide based thin film transistors by atomic layer deposition based on ozone
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|c 2013
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|a Text
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|a ƒaComputermedien
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|a Date Completed 17.10.2013
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A simplified encapsulation strategy for metal-oxide based TFTs, using ozone instead of water as an oxygen source in a low-temperature ALD process is demonstrated. Thereby, the threshold voltage remains unaltered and the hysteresis is permanently reduced. Costly energy- and time-consuming post-treatment processes can be avoided. This concept is widely applicable to various encapsulation materials (e.g., Al2 O3 , TiO2 , ZrO2 ) and metal-oxide channel semiconductors (e.g., zinc-tin-oxide (ZTO), indium-gallium-zinc-oxide (IGZO))
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Gases
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|a Membranes, Artificial
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|a Metals
|2 NLM
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|a Oxides
|2 NLM
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|a Babin, Nikolai
|e verfasserin
|4 aut
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|a Behrendt, Andreas
|e verfasserin
|4 aut
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|a Jakob, Timo
|e verfasserin
|4 aut
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|a Görrn, Patrick
|e verfasserin
|4 aut
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|a Riedl, Thomas
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 20 vom: 28. Mai, Seite 2821-5
|w (DE-627)NLM098206397
|x 1521-4095
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| 773 |
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|g volume:25
|g year:2013
|g number:20
|g day:28
|g month:05
|g pages:2821-5
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|u http://dx.doi.org/10.1002/adma.201300549
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