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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201204382
|2 doi
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|a eng
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1 |
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|a Yang, Rong
|e verfasserin
|4 aut
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|a Organic vapor passivation of silicon at room temperature
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|c 2013
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|a Text
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Completed 23.09.2013
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a A simple, inexpensive, efficient, and scalable method to create air-stable organic surface passivation layers on silicon using a vapor-phase treatment is demonstrated. A variant of initiated chemical vapor deposition is used to synthesize a thin film that acts as both a passivation layer and an antireflective coating. The lowest surface recombination velocity reported to date is achieved and maintained during prolonged exposure to air
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Buonassisi, Tonio
|e verfasserin
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|a Gleason, Karen K
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 25(2013), 14 vom: 11. Apr., Seite 2078-83
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|x 1521-4095
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|g year:2013
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|g day:11
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