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231224s2013 xx |||||o 00| ||eng c |
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|a 10.1021/la304581c
|2 doi
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|a pubmed24n0744.xml
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|a eng
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|a Zhao, Yunlong
|e verfasserin
|4 aut
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|a High-performance transistors based on zinc tin oxides by single spin-coating process
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|c 2013
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 14.06.2013
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|a Date Revised 08.01.2013
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Films of zinc tin oxide (ZTO), grown from solutions with zinc acetate dehydrate and tin(II) 2-ethylhexanoate dissolved in 2-methoxyethanol, have been used to fabricate thin-film transistors in combination with solution-processed aluminum oxide as the gate insulator. And the nonhomogeneity of the single-layer ZTO films, caused by both ZTO film-substrate interaction and surface crystallization, has been studied, which is essential to achieve high performance transistors. In the bottom-contact thin-film transistor based on a Sn-rich layer of ZTO, a high mobility of 78.9 cm(2) V(-1) s(-1) in the saturation region has been obtained, with an on-to-off current ratio of 10(5) and a threshold gate voltage of 1.6 V
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|a Journal Article
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| 700 |
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|a Duan, Lian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Dong, Guifang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Deqiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qiao, Juan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Liduo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qiu, Yong
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 29(2013), 1 vom: 08. Jan., Seite 151-7
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|x 1520-5827
|7 nnns
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| 773 |
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|g volume:29
|g year:2013
|g number:1
|g day:08
|g month:01
|g pages:151-7
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|u http://dx.doi.org/10.1021/la304581c
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